Effects of Gate Stack Composition and Thickness in 2-D...

IEEE Journal of the Electron Devices Society 2019 Vol. 7

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Lin, Yuh-Chen, McGuire, Felicia, Noyce, Steven, Williams, Nicholas, Cheng, Zhihui, Andrews, Joseph, Franklin, Aaron D.
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Volume:
7
Year:
2019
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2922441
File:
PDF, 754 KB
2019
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