Analysis of the Basal Plane Dislocation Density and...

Materials 2019 / 07 Vol. 12; Iss. 13

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J.
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Volume:
12
Journal:
Materials
DOI:
10.3390/ma12132207
Date:
July, 2019
File:
PDF, 3.23 MB
2019
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