Computational study on silicon oxide plasma enhanced...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SE

Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/ helium

Li, Hu, Higuchi, Hisashi, Kawaguchi, Satoru, Satoh, Kohki, Denpoh, Kazuki
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Volume:
58
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab163d
Date:
June, 2019
File:
PDF, 1.34 MB
2019
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