Free-standing 2-inch bulk GaN crystal fabrication by HVPE...

Journal of Physics Conference Series 2019 / 03 Vol. 1199

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G
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Volume:
1199
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1199/1/012004
Date:
March, 2019
File:
PDF, 1.92 MB
english, 2019
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