[IEEE 2019 31st International Symposium on Power...

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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode

Liu, Yinxiang, Han, Shaowen, Yang, Shu, Sheng, Kuang
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Year:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757634
File:
PDF, 1.05 MB
english, 2019
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