[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode
Liu, Yinxiang, Han, Shaowen, Yang, Shu, Sheng, KuangYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757634
File:
PDF, 1.05 MB
english, 2019