The Impact of Resistance Drift of Phase Change Memory (PCM)...

IEEE Electron Device Letters 2019 / 8 Vol. 40; Iss. 8

The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance

Oh, Sangheon, Huang, Zhisheng, Shi, Yuhan, Kuzum, Duygu
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Volume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2925832
Date:
August, 2019
File:
PDF, 1.06 MB
english, 2019
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