[IEEE 2019 31st International Symposium on Power...

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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - New Locos Trench Oxide IGBT Enables 25% Higher Current Density in 4.5kV/1500A Module

Ngwendson, L., Deviny, I., Zhu, C., Saddiqui, I., Hutchings, J., Kong, C., Wang, Y., Luo, H.
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Year:
2019
DOI:
10.1109/ISPSD.2019.8757651
File:
PDF, 1.11 MB
2019
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