[IEEE 2019 31st International Symposium on Power...

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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

Stockman, Arno, Canato, Eleonora, Meneghini, Matteo, Meneghesso, Gaudenzio, Moens, Peter, Bakeroot, Benoit
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Year:
2019
DOI:
10.1109/ISPSD.2019.8757667
File:
PDF, 840 KB
2019
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