Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions
Tsutsumi, ToshiyukiVolume:
58
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0df1
Date:
June, 2019
File:
PDF, 2.20 MB
2019