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Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed
Sochacki, Tomasz, Sintonen, Sakari, Weyher, Jan, Amilusik, Mikolaj, Sidor, Aneta, Bockowski, MichalVolume:
58
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0f15
Date:
June, 2019
File:
PDF, 884 KB
2019