Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC...

Materials Science Forum 2018 / 6 Vol. 924

Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

Ashida, Koji, Dojima, Daichi, Torimi, Satoshi, Yabuki, Norihito, Sudo, Yusuke, Sakaguchi, Takuya, Nogami, Satoru, Kitabatake, Makoto, Kaneko, Tadaaki
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.249
Date:
June, 2018
File:
PDF, 4.41 MB
english, 2018
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