Impact of Device Structure on Neutron-Induced Single-Event...

Materials Science Forum 2019 / 7 Vol. 963

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

Kono, Hiroshi, Ohashi, Teruyuki, Noda, Takao, Sano, Kenya
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Volume:
963
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.963.738
Date:
July, 2019
File:
PDF, 1.56 MB
english, 2019
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