Demonstration of 4H-SiC JFET Digital ICs Across 1000°C...

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu
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Volume:
963
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.963.813
Date:
July, 2019
File:
PDF, 1.50 MB
english, 2019
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