Analytical Switching Model of a 1200V SiC MOSFET in a...

IEEE Access 2019 Vol. 7

Analytical Switching Model of a 1200V SiC MOSFET in a High-Frequency Series Resonant Pulsed Power Converter for Plasma Generation

Wu, Qunfang, Wang, Mengqi, Zhou, Weiyang, Wang, Xiaoming, Liu, Guanliang, You, Changqi
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Volume:
7
Year:
2019
Language:
english
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2019.2930535
File:
PDF, 43 KB
english, 2019
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