![](/img/cover-not-exists.png)
[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Diode Reverse Recovery Characteristics of a Shielded-Gate Trench Power MOSFET
Hossain, Zia, Mullapudi, Raghuram, Surdi, HarshadYear:
2019
DOI:
10.1109/ISPSD.2019.8757673
File:
PDF, 1.00 MB
2019