Investigation of Switching-Induced Local Defects in...

IEEE Transactions on Electron Devices 2019 / 5 Vol. 66; Iss. 5

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB

Ichihara, Reika, Fujii, Shosuke, Yamaguchi, Marina, Yoshimura, Yoko, Mitani, Yuichiro, Saitoh, Masumi
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2904984
Date:
May, 2019
File:
PDF, 2.01 MB
2019
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