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Journal of Electronic Materials 2019 / 8

AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2

Chen, Fan, Zhang, Lin-Qing, Wang, Peng-Fei
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Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-019-07524-9
Date:
August, 2019
File:
PDF, 1.11 MB
english, 2019
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