Combining block copolymer lithography with self-aligned...

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Combining block copolymer lithography with self-aligned double patterning to achieve 10.5 nm full-pitch line/space patterns

Zhou, CHun, Dolejsi, Moshe, Xiong, Shisheng, Ren, Jiaxing, Ashley, Elizabeth Michiko, Craig, Gordon, Nealey, Paul F
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Journal:
Nanotechnology
DOI:
10.1088/1361-6528/ab34f6
Date:
July, 2019
File:
PDF, 1.15 MB
2019
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