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Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching
Serkov, A V, Golubkov, V A, Ilyin, V A, Savchenko, D AVolume:
387
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/387/1/012068
Date:
July, 2018
File:
PDF, 593 KB
english, 2018