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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Investigation on the Modeling of 3300 V SiC MOSFET
Han, Zhonglin, Chen, Hong, Chen, Ximing, Zhao, Yanli, Li, Chengzhan, Yun, BaiYear:
2019
Language:
english
DOI:
10.1109/EDSSC.2019.8754150
File:
PDF, 264 KB
english, 2019