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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - High Crystalline Quality of Si 0.5 Ge 0.5 Layer Grown on a Novel Three-layer Strain Relaxed Buffer
Zhao, Zhiqian, Li, Yongliang, Wang, Guilei, Li, Yan, Wang, WenwuYear:
2019
Language:
english
DOI:
10.1109/EDSSC.2019.8754356
File:
PDF, 449 KB
english, 2019