[IEEE 2019 IEEE International Conference on Electron...

  • Main
  • [IEEE 2019 IEEE International...

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - High Crystalline Quality of Si 0.5 Ge 0.5 Layer Grown on a Novel Three-layer Strain Relaxed Buffer

Zhao, Zhiqian, Li, Yongliang, Wang, Guilei, Li, Yan, Wang, Wenwu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2019
Language:
english
DOI:
10.1109/EDSSC.2019.8754356
File:
PDF, 449 KB
english, 2019
Conversion to is in progress
Conversion to is failed