A study of electrical characteristics of Gd2O3/GaN and...

Microelectronic Engineering 2019 / 08 Vol. 216

A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures

Ghosh, Joydeep, Das, Sudipta, Mukherjee, Sudipta, Ganguly, Swaroop, Laha, Apurba
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Volume:
216
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111097
Date:
August, 2019
File:
PDF, 768 KB
2019
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