[IEEE 2019 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - Hsinchu, Taiwan (2019.4.22-2019.4.25)] 2019 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - A 30 ns 16 Mb 2 b/cell Embedded Flash with Ramped Gate Time-Domain Sensing Scheme for Automotive Application

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