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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 500°C SiC-based driver IC for SiC power MOSFETs
Kargarrazi, Saleh, Elahipanah, Hossein, Tong, Zikang, Senesky, Debbie, Zetterling, Carl-MikaelYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757618
File:
PDF, 1.51 MB
english, 2019