[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias
Unger, Christian, Pfost, MartinYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757661
File:
PDF, 1.44 MB
english, 2019