The Role of Defects on Forward Current in 4H-SiC p-i-n...

IEEE Transactions on Electron Devices 2019 / 7 Vol. 66; Iss. 7

The Role of Defects on Forward Current in 4H-SiC p-i-n Diodes

Sozzi, Giovanna, Puzzanghera, Maurizio, Menozzi, Roberto, Nipoti, Roberta
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2917534
Date:
July, 2019
File:
PDF, 1.44 MB
english, 2019
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