[IEEE 2019 31st International Symposium on Power...

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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients

Reigosa, P. Diaz, Papadopoulos, C., Iannuzzo, F., Corvasce, C., Rahimo, M.
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Year:
2019
Language:
english
DOI:
10.1109/ispsd.2019.8757575
File:
PDF, 3.89 MB
english, 2019
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