![](/img/cover-not-exists.png)
[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients
Reigosa, P. Diaz, Papadopoulos, C., Iannuzzo, F., Corvasce, C., Rahimo, M.Year:
2019
Language:
english
DOI:
10.1109/ispsd.2019.8757575
File:
PDF, 3.89 MB
english, 2019