[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures
Li, Sheng, Liu, Siyang, Zhang, Chi, Wei, Jiaxing, Zhang, Long, Sun, Weifeng, Zhu, Youhua, Zhang, Tingting, Wang, Dongsheng, Sun, Yinxia, Li, Yiheng, Zhu, TinggangYear:
2019
Language:
english
DOI:
10.1109/ispsd.2019.8757594
File:
PDF, 975 KB
english, 2019