Correction of the Reverse Recovery Characteristics of...

Semiconductors 2019 / 6 Vol. 53; Iss. 6

Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation

Ivanov, P. A., Kudoyarov, M. F., Potapov, A. S., Samsonova, T. P.
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Volume:
53
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S106378261906006X
Date:
June, 2019
File:
PDF, 322 KB
english, 2019
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