Calculation of 4H-SiC Schottky Diode with Breakdown Voltage...

International Journal of Engineering and Technology 2018 / 12 Vol. 7; Iss. 4.36

Calculation of 4H-SiC Schottky Diode with Breakdown Voltage Up to 3 KV

Yu.Drakin, A., B. Rybalka, S., A. Demidov, A.
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Volume:
7
Language:
english
Journal:
International Journal of Engineering & Technology
DOI:
10.14419/ijet.v7i4.36.24942
Date:
December, 2018
File:
PDF, 569 KB
english, 2018
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