The study of influence of the gas flow rate to etched layer...

The study of influence of the gas flow rate to etched layer thickness, and roughness of the anisotropy field of gallium arsenide is etched in the plasma chemical etching process

Ageev, O A, Klimin, V S, Solodovnik, M S, Eskov, A V, Krasnoborodko, S Y
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Volume:
741
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/741/1/012178
Date:
August, 2016
File:
PDF, 1.48 MB
english, 2016
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