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RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
Inhofer, Andreas, Wilde, Taylor, Duffy, Jack, Boukhicha, Mohamed, Palomo, Jose, Watanabe, Kenji, Taniguchi, Takashi, Berroir, Jean-Marc, Fève, Gwendal, Bocquillon, Erwann, Plaçais, Bernard, Assaf, BadLanguage:
english
Journal:
Journal of Physics: Materials
DOI:
10.1088/2515-7639/ab383c
Date:
August, 2019
File:
PDF, 404 KB
english, 2019