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[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD
Abhinay, S., Arulkumaran, S., Ng, G.I., Ranjan, K., Deki, M., Nitta, S., Honda, Y., Amano, H.Year:
2019
Language:
english
DOI:
10.1109/EDTM.2019.8731215
File:
PDF, 278 KB
english, 2019