[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

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