[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Experimental Study on the Electrical Properties of Lateral IGBT Under the Mechanical Strain
Wu, Wangran, Wang, Yaohui, Zhang, Long, Yang, Guangan, Liu, Siyang, Zhu, Jing, Sun, WeifengYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757677
File:
PDF, 1.27 MB
english, 2019