Study of Photodiodes Based on the InGaAs Structure with a...

Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

Boltar, K. O., Irodov, N. A., Sednev, M. V., Marmalyuk, A. A., Ladugin, M. A., Ryaboshtan, Yu. L.
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Volume:
64
Language:
english
Journal:
Journal of Communications Technology and Electronics
DOI:
10.1134/S1064226919030021
Date:
March, 2019
File:
PDF, 541 KB
english, 2019
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