A heterostructure for resonant-cavity GaAs p-i-n photodiode with 840-860 nm wavelength
Rochas, S S, Kolodeznyi, E S, Kozyreva, O A, Voropaev, K O, Sudas, D P, Novikov, I I, Egorov, A YuVolume:
1236
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1236/1/012071
Date:
June, 2019
File:
PDF, 981 KB
english, 2019