Stability and Reliability of Lateral GaN Power Field-Effect...

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IEEE Transactions on Electron Devices 2019

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

del Alamo, Jesus A., Lee, Ethan S.
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Year:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2019.2931718
File:
PDF, 1.26 MB
english, 2019
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