Frequency- and Temperature-Dependent Gate Reliability of...

IEEE Transactions on Electron Devices 2019 / 8 Vol. 66; Iss. 8

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

He, Jiabei, Wei, Jin, Yang, Song, Wang, Yuru, Zhong, Kailun, Chen, Kevin J.
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2924675
Date:
August, 2019
File:
PDF, 1.83 MB
2019
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