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Growth Rate Reduction of GaN Due to Ga Surface Accumulation
Crawford, D.E., Held, R., Johnston, A. M., Dabiran, A. M., Cohen, Philip I.Volume:
1
Year:
1996
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300001848
File:
PDF, 111 KB
1996