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[IEEE 2019 International Conference on IC Design and Technology (ICICDT) - SUZHOU, China (2019.6.17-2019.6.19)] 2019 International Conference on IC Design and Technology (ICICDT) - High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
Li, Yue, Yin, Ruiyuan, Tao, Ming, Hao, Yilong, Wen, Cheng P., Wang, Maojun, Zhang, Jie, Yang, Xuelin, Shen, BoYear:
2019
DOI:
10.1109/ICICDT.2019.8790866
File:
PDF, 1.99 MB
2019