[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Switching Loss Model of SiC MOSFET Promoting High Frequency Applications
Li, Xuan, Li, Xu, Yang, Liping, Huang, Alex Q., Liu, Pengkun, Deng, Xiaochuan, Zhang, BoYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757669
File:
PDF, 2.13 MB
english, 2019