On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Rodrigues, Isabel Harrysson, Niepce, David, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Bauch, Thilo, Grahn, JanVolume:
9
Journal:
AIP Advances
DOI:
10.1063/1.5107493
Date:
August, 2019
File:
PDF, 1.41 MB
2019