Effect of cetyl-trimethyl-ammonium-bromide (CTAB) and bis...

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Microelectronic Engineering 2019 / 8

Effect of cetyl-trimethyl-ammonium-bromide (CTAB) and bis (3-sulfopropyl) disulfide (SPS) on the through-silicon-via (TSV) copper filling

Wang, Fuliang, Zhang, Qinglong, Zhou, Kang, Le, Yuping, Liu, Wei, Wang, Yan, Wang, Feng
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Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111109
Date:
August, 2019
File:
PDF, 702 KB
english, 2019
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