InAlAs/InGaAs/GaAs metamorphic high-electron mobility...

Microelectronic Engineering 2019 / 09 Vol. 217

InAlAs/InGaAs/GaAs metamorphic high-electron mobility transistors with selective and nonselective recess gate processes

Lin, Yu-Shyan, Ma, Yeh-Chang
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Volume:
217
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111107
Date:
September, 2019
File:
PDF, 6.16 MB
english, 2019
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