![](/img/cover-not-exists.png)
InAlAs/InGaAs/GaAs metamorphic high-electron mobility transistors with selective and nonselective recess gate processes
Lin, Yu-Shyan, Ma, Yeh-ChangVolume:
217
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111107
Date:
September, 2019
File:
PDF, 6.16 MB
english, 2019