Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping
Murata, K., Tawara, T., Yang, A., Takanashi, R., Miyazawa, T., Tsuchida, H.Volume:
126
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5098101
Date:
July, 2019
File:
PDF, 2.11 MB
english, 2019