[IEEE 2018 IEEE Electron Devices Kolkata Conference (EDKCON) - Kolkata, India (2018.11.24-2018.11.25)] 2018 IEEE Electron Devices Kolkata Conference (EDKCON) - Impact of Donor Layer Thickness, Doping Concentration and Gate-Width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications

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