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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 3kV SiC Charge-Balanced Diodes Breaking Unipolar Limit
Ghandi, Reza, Bolotnikov, Alexander, Lilienfeld, David, Kennerly, Stacey, Ravisekhar, RajuYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757568
File:
PDF, 1.35 MB
english, 2019