[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Repetitive Short Circuit Energy Dependent $V_{\text{TH}}$ Instability of 1.2kV SiC Power MOSFETs
Sun, Jiahui, Wei, Jin, Zheng, Zheyang, Wang, Yuru, Chen, Kevin J.Year:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757639
File:
PDF, 894 KB
english, 2019