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[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions
Ren, Na, Wang, Kang L., Wu, Jiupeng, Xu, Hongyi, Sheng, KuangYear:
2019
Language:
english
DOI:
10.1109/ISPSD.2019.8757657
File:
PDF, 1.10 MB
english, 2019